| 摘要 |
PURPOSE: Provided is a semiconductor storage device of high reliability and proper characteristics, capable of including a ferroelectric capacitor and a thermal process at a required temperature, after wiring formation. CONSTITUTION: In a TC parallel unit series connection-type ferroelectric memory, a first contact(15) between one side source/drain diffusion layers(5,6) and a lower part electrode(9), and a second contact(17) between an upper part electrode(11) and the other side of source/drain diffusion layers(5,6), are formed from a first oxidation resistant conductive film(13) and a second oxidation resistant conductive film(16), respectively. A hydrogen block film is provided on a capacitor, which comprises an opening part in a region with no memory cell which is present at each memory cell block, by utilizing a memory cell block structure specific to the TC parallel unit series-connected type ferroelectric memory. |
