METHOD FOR FABRICATING SEMICONDUCTOR, METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for fabricating semiconductor, a method for fabricating semiconductor substrate, and a semiconductor light emitting device are provided to ensure that no cracking or the like occurs particularly in a semiconductor layer having a small lattice constant among a plurality of layered semiconductor layers made of group III-V nitrides. CONSTITUTION: In a structure using a substrate made of a material different from a group III-V nitride, the lattice constant of a semiconductor layer having a comparatively small lattice constant among a plurality of semiconductor layers grown on the substrate, that is, a semiconductor layer containing aluminum, is made to substantially match with the lattice constant of a strain suppression layer at room temperature after thermal shrinkage or thermal expansion.