| 摘要 |
PURPOSE: A complementary-metal-oxide-semiconductor(MOS) image sensor is provided to prevent the quality of an image from being deteriorated by noise, by making a photodiode n+ region control electrons generated by the heat on the surface of a photodiode region so that the electrons are prevented from being recombined or migrating to a photodiode n region. CONSTITUTION: Transfer gates(36) are formed on a semiconductor substrate(31). Photodiode n regions(33) are positioned in the first depth at one side of the transfer gates, separated from the transfer gates by a predetermined interval. Photodiode surface p regions(34) has an interface of the same area as the photodiode n region, corresponding to the photodiode n region and having the second depth shallower than the first depth. Photodiode n+ regions(38) are positioned in the second depth in a portion where a photodiode surface p region is separated from the transfer gate. Floating regions are formed at the other side of the transfer gates.
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