High voltage switch circuit having transistors and semiconductor memory device provided with the same

摘要

A high voltage switch circuit according to the present invention includes PMOS transistors having one conductive terminals receiving a high voltage, NMOS transistors having one conductive terminals receiving a ground voltage, and transistors for voltage control. The transistors for voltage control have their gates supplied with gate control signals of which potential change in accordance with the level of the high voltage. Thus, a high voltage switch circuit which can normally operate independent of the voltage level can be provided.