APPARATUS FOR TREATING SUBSTRATE AND PLASMA TREATING METHOD

摘要

The present invention relates to a substrate processing apparatus. According to an embodiment of the present invention, the substrate processing apparatus comprises: a process chamber for processing a substrate by using plasma; a support unit positioned inside the process chamber, and supporting the substrate; a gas supply unit for supplying process gas to the inside of the process chamber; and a plasma generation unit for exciting the process gas supplied inside the process chamber. The support unit includes a cleaning unit for spraying gas to an upper surface of the support unit, and cleaning the support unit. The cleaning unit includes: a gas supply unit; a gas supply line unit for connecting the support unit in the gas supply unit; and a controller for controlling the gas supply unit and the gas supply line unit.