Method for removing semiconductor ARC using ARC CMP buffing

摘要

The present invention provides a method for selectively removing anti-reflective coating (ARC) from the surface of a dielectric layer over the surface of a substrate without scratching the dielectric layer and/or tungsten conductive contacts formed therein. In one embodiment, a chemical-mechanical polishing (CMP) process with non-oxidizer containing slurry is used to selectively remove the ARC layer at a rate which is significantly faster than the removal rates of the dielectric layer or the tungsten contacts. Further, an ARC CMP buffing process is used with a soft buffing pad in the CMP process to buff the dielectric layer and tungsten contacts during the ARC layer removal.