发明名称 |
Phase-shift photomask for patterning high density features |
摘要 |
A method for forming a photomask includes providing a transparent substrate and forming an opaque layer over at least a first portion of the transparent substrate. The opaque layer is patterned to define a mask pattern and expose at least a second portion of the transparent substrate. The second portion is etched to define a phase shifting region. The width of the phase shifting region defines a critical dimension. The critical dimension is measured, and the phase shifting region is etched based on the critical dimension to undercut the optically opaque layer. A photomask includes a transparent substrate and a phase shifting region defined in the transparent substrate. The phase shifting region includes sloped sidewalls having a slope of less than about 85°.
|
申请公布号 |
US6410191(B1) |
申请公布日期 |
2002.06.25 |
申请号 |
US19990344458 |
申请日期 |
1999.06.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
NISTLER JOHN L.;BROWN STUART E. |
分类号 |
G03F1/08;G03F1/00;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|