| 摘要 |
PURPOSE: A measuring method of a pattern collapse is provided to prevent a fall-down of a pattern and a CD(Critical Dimension) shrinkage by measuring and checking an exposed pattern in an exposure using a specific pattern. CONSTITUTION: After exposing and developing a defined pattern specifically laid out on the entire surface of a wafer through constant increase of an exposure energy in an exposure process, variation values of the center portion of the pattern is measured by scanning the changed pattern according to the variable exposure energy. A graph is formed by corresponding the variation values to the changes of the exposure energy, then a collapse state of the pattern is analyzed using the graph as a basis. At this time, the defined pattern comprises a base pattern(10) having a wide width, and a minute pattern(20) formed beside the base pattern(10) having minute lines and spaces.
|
