METHOD FOR FORMING TANTALUM OXIDE FILM USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION

摘要

PURPOSE: A Ta2O5 film formation method is provided to improve electrical properties and quality of the Ta2O5 film by using a PEALD(Plasma Enhanced Atomic Layer Deposition). CONSTITUTION: After forming a polysilicon layer(21) on a substrate(20), a monolayer tantalum oxide is deposited by flowing source gases and inducing a plasma using PECVD method. The monolayer tantalum oxide deposition processing is repeatedly carried out so as to form a tantalum oxide film. The tantalum oxide film is crystallized by annealing process, thereby forming a Ta2O5 dielectric film(22). An upper electrode(23) is then formed on the Ta2O5 dielectric film(22).