| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to easily control a critical dimension of a gate electrode by using a low dielectric film of a polymer group as a sacrificial layer. CONSTITUTION: A stacked structure of a gate insulating pattern(34), a polysilicon pattern(36) and a first sacrificial pattern is formed on a semiconductor substrate(31). An insulating spacer(41) is formed at both sidewalls of the stacked structure. A second sacrificial pattern(43) is formed to expose the first sacrificial pattern. A groove is formed to expose the polysilicon pattern(36) by removing the second sacrificial pattern. A metal silicide pattern(49) is formed on the exposed polysilicon pattern. By forming and polishing a mask insulator using the second sacrificial pattern as a stopper, a mask insulating pattern is filled into the groove. At this time, a low dielectric film of a polymer group, such as an SOG is used as the second sacrificial pattern(43).
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