发明名称 METHOD AND CIRCUIT FOR CONTROLLING SOURCE VOLTAGE OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A method for controlling a source voltage of a semiconductor memory device and a circuit thereof are provided to prevent a voltage level of a bit line from being reduced by controlling a generation of a source voltage according to a column signal. CONSTITUTION: At least one active source voltage generator provides a source voltage to a bit line. A first control signal generator(31) receives a row signal and generates a control signal for controlling the at least one active source voltage generator to generate a source voltage for a bit line. A second control signal generator(32) receives a column signal and generates a control signal for controlling the active source voltage generator to generate a source voltage for a bit line. An output section(33) provides the control signal from the first control signal generator(31) or the control signal from the second control signal generator(32) to the at least one active source voltage generator.
申请公布号 KR20020047875(A) 申请公布日期 2002.06.22
申请号 KR20000076512 申请日期 2000.12.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, YEONG HUI;KIM, DAE SEON;LEE, HYEONG YONG;SON, TAE SIK
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址