| 摘要 |
PURPOSE: A metal interconnection formation method of semiconductor devices is provided to improve a contact resistance by increasing an effective contact area. CONSTITUTION: A first barrier film is formed on a semiconductor substrate having a lower metal interconnection(22b). A first insulating layer, a second barrier film and a second insulating layer(26b) are sequentially formed on the first barrier film. A contact hole is formed to expose the lower metal interconnection(22b). A trench(28) is formed by selectively etching the second insulating layer(26b). The surface of the lower metal interconnection(22b) is etched by using chlorine-group etchant, thereby enhancing the surface roughness of the lower metal interconnection(22b). A plug and an upper metal interconnection are sequentially formed in the contact hole and the trench.
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