发明名称 SEMICONDUCTING CERAMIC, DEGAUSSING CIRCUIT FOR POSITIVE TEMPERATURE COEFFICIENT THERMISTOR FOR DEMAGNETIZATION, AND METHOD OF MANUFACTURING THE CERAMIC
摘要 PROBLEM TO BE SOLVED: To provide a positive temperature coefficient thermistor, having a gently changing transient-decay current characteristic which does not increase the element size of the thermistor. SOLUTION: The transient-decay current characteristic of a semiconductor ceramic, which has a positive temperature characteristic of resistance and is used as a thermistor element for demagnetization is changed gently, by adjusting the rate of change of temperature-characteristic-of-resistanceαof the ceramic calculated from the formula to be within the range of 10-17%:α=[ln(ρ2/ρ1)/(T2-T1)]×100(%/ deg.C) whereρ1: the specific resistance value which is 10 times as large as that ofρ25, when the element temperature is adjusted to the room temperature (25 deg.C),ρ2: the specific resistance value which is 100 times as large as that ofρ25, when the element temperature is adjusted to the room temperature (25 deg.C), T1: the element temperature when the resistance value indicatesρ1, and T2: the element temperature when the resistance value indicatesρ2.
申请公布号 JP2002175902(A) 申请公布日期 2002.06.21
申请号 JP20000370477 申请日期 2000.12.05
申请人 MURATA MFG CO LTD 发明人 NAMIKAWA YASUNORI;TAKADA MITSUGI;TANAKA HIROKI;KITAMURA YOSHINORI
分类号 C04B35/468;H01C7/02;H01C17/26;(IPC1-7):H01C7/02 主分类号 C04B35/468
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