| 摘要 |
PROBLEM TO BE SOLVED: To provide an RF matching device which is used for the impedance matching between an RF generator and a chamber in a process of manufacturing a semiconductor element by using a plasma. SOLUTION: A rotary inductor 4 and a fixed inductor 5 are electrically connected in series and respectively have variable inductors 45 which are positioned to adjacent positions. The variable inductor 4 can move in such a way that the inductor 4 is magnetically shielded by the magnetic flux of the fixed inductor 5 by receiving interference from the magnetic flux and the inductance of the inductor 4 is adjusted by the movement. When this RF matching device is applied to the semiconductor element manufacturing process using the plasma, the matching time of the device can be shortened and, accordingly, the service life of the device can be prevented from being shortened by excessive heat radiation. |
