SEMICONDUCTOR MEMORY DEVICE EQUIPPED WITH IMPROVED GROUND VOLTAGE FEED LINE STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a DRAM device which is equipped with a ground voltage feed line structure capable of minimizing noises caused by a load difference of a ground voltage feed line so as to reduce the leakage current of a memory cell. SOLUTION: The word line drive ground voltage feed line VssW of this DRAM device is so arranged as to have a mesh structure. The word line drive ground voltage feed line VssW is arranged in parallel with an array power supply voltage supply line VccA passing through sub-word line drive regions 140, sense amplifying regions 120 are arranged among sub-arrays 100 so as to cross the ground voltage feed line VssW, and the word line drive ground voltage feed line VssW is arranged passing through the sense amplifying regions 120. By this layout structure, the load of the ground voltage feed line VssW is equally distributed as to the word line of each sub-array 100, so that the ground noises of the word line WL can be reduced.