METHOD FOR PRODUCING SUBSTRATE FOR DISPLAY

摘要

PROBLEM TO BE SOLVED: To solve the problems of five-mask-process for channel etching TFT that overetching takes place on the drain electrode at the time of forming an opening, the characteristics of a transistor are susceptible to deterioration through formation of a passivation insulation layer, the production process is long and the process cost is not reduced. SOLUTION: A source line and a drain line are formed by depositing a heat resistant metal and an aluminum alloy which can be anodized. A passivation insulation layer is eliminated by anodizing the surface of these lines and converting an amorphous silicon layer containing impurities into a silicon oxide layer utilizing a photomask. A process for making insular a semiconductor layer and a process for forming an opening are rationalized by forming an extra insulation layer on an exposed scanning line.