发明名称 METHOD OF PRODUCING CERAMIC MEMBER FOR SEMICONDUCTOR TREATMENT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of producing a ceramic member for a semiconductor treatment device, by which warps of a ceramic heater and an electrostatic chuck can be suppressed and the dimensions and the arrangement of a heating element wiring or/and an inner electrode can be formed in high accuracy. SOLUTION: The method of producing the ceramic member for the semiconductor treatment device comprises a process for forming grooves, in which the heating element wiring or/and the inner electrode are arranged, on a substrate of a ceramic sintered compact, a process for forming the heating element wiring or/and the inner electrode by charging an electroconductive paste being a precursor of the heating element wiring or/and the inner electrode into the grooves and firing, a process for superposing another substrate of the ceramic sintered compact onto the substrate of the ceramic sintered compact mentioned above, a process for connecting the heating element wiring or/and the inner electrode to electrode terminals, and a process for subjecting the superposed substrates of the ceramic sintered compacts to heat treatment to joint them to each other.</p>
申请公布号 JP2002173378(A) 申请公布日期 2002.06.21
申请号 JP20000352897 申请日期 2000.11.20
申请人 TOSHIBA CERAMICS CO LTD 发明人 MURAMATSU SHIGEKO;AONUMA SHINICHIRO;FUJITA MITSUHIRO
分类号 H05B3/20;C04B37/00;H01L21/68;H01L21/683;H05B3/10;H05B3/18;(IPC1-7):C04B37/00 主分类号 H05B3/20
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