| 摘要 |
PROBLEM TO BE SOLVED: To increase the mobility of two-dimensional electrons by efficiently storing the two-dimensional electrons and to provide the device of low noise by utilizing the high mobility. SOLUTION: This GaInP-based laminated structure body 1 is provided with at least a buffer layer 11, an electron traveling layer 12 composed of GaXIn1-XAs (0<=X<=1), a spacer layer 13 composed of GaInP and an electron supply layer 14 composed of GaInP laminated on the surface of a GaAs single crystal substrate 10. The electron traveling layer 12 is provided with a composition gradient region for which an indium composition ratio (1-X) is increased in the increasing direction of a layer thickness and a gradient is made toward the boundary 12b of joining with the side of the electron supply layer 14.
|
