METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A contact hole formation method of semiconductor devices is provided to prevent a leakage by compensating a trench due to a misalign. CONSTITUTION: A metal film(22) is formed on a semiconductor substrate(21). An interlayer dielectric(23) is formed on the entire surface of the resultant structure. A contact hole(25) is formed to expose the portions of the metal film(22) by selectively etching the interlayer dielectric(23). At this time, a trench portion(A) is formed by a misalign. The trench portion(A) is buried by an insulating sidewall, thereby preventing a leakage. The insulating sidewall is one selected from the groups composed of SiON, Al2O3, Ta2O5 and nitride.