| 摘要 |
PURPOSE: A fabrication method of DRAMs(Dynamic Random Access Memory) is provided to improve a yield by preventing a fall-down of a lower electrode of a dummy capacitor. CONSTITUTION: After depositing and planarizing an amorphous silicon(14), the amorphous silicon(14) remains on an etching area of an oxide(12). Then, a lower electrode(15) of a capacitor and another lower electrode(16) of a dummy capacitor are simultaneously formed by removing a conductive layer exposed due to the planarization processing. By removing the exposed amorphous silicon(14) remaining in the lower electrode(15) through an etch processing, the amorphous silicon(14) in the lower electrode(16) of the dummy capacitor remains only, thereby restraining a fall-down phenomenon of the lower electrode(16).
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