| 摘要 |
PURPOSE: A contact hole formation method of semiconductor devices is provided to prevent a short between word line and a plug by reducing loss of hard mask using multi-layer hard masks. CONSTITUTION: After forming a metal film on a semiconductor substrate(21), a first nitride layer(23), an etch barrier(24) and a second nitride layer(25) as multi-layer hard masks are sequentially formed on the metal film. Word lines(22) are formed by sequentially etching the nitride layer, the etch barrier, the first nitride layer and the metal film. An insulating spacer(26) is formed at both sidewalls of the word lines. After forming an ILD(Inter Layer Dielectric)(27) on the resultant structure, a contact hole(29) is formed to expose the surface of the substrate by selectively etching the ILD.
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