发明名称 |
END POINT DETECTOR OF CHEMICAL MECHANICAL POLISHING EQUIPMENT |
摘要 |
PURPOSE: An end point detector of chemical mechanical polishing equipment is provided to precisely detect an etch end point, by installing a vacuum pipe on the back surface of a window confronting a refraction mirror so that deionized water is absorbed to change a refractive index of light. CONSTITUTION: A light emitting device(151) irradiates light to detect a predetermined thickness of a layer. The refraction mirror reflects the light irradiated from the light emitting device to a polishing pad(120). The window(155) is formed in a portion of the polishing pad corresponding to the refractive mirror(153) to transmit the light to the outside of the polishing pad. A slurry introducing path is formed on the upper surface facing a wafer carrier. A detecting unit detects the light reflected from a wafer(10) and an etch end point. A deionized water absorbing pipe absorbs drops of the deionized water at a vacuum pressure, penetrating a polishing table(110). One end of the deionized water absorbing pipe is installed on the back surface of the window facing the refractive mirror. A vacuum pump generates vacuum pressure in the deionized water absorbing pipe, connected to the other end of the deionized water absorbing pipe.
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申请公布号 |
KR20020045739(A) |
申请公布日期 |
2002.06.20 |
申请号 |
KR20000075127 |
申请日期 |
2000.12.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KO, GEUN YEONG |
分类号 |
H01L21/302;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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