发明名称 END POINT DETECTOR OF CHEMICAL MECHANICAL POLISHING EQUIPMENT
摘要 PURPOSE: An end point detector of chemical mechanical polishing equipment is provided to precisely detect an etch end point, by installing a vacuum pipe on the back surface of a window confronting a refraction mirror so that deionized water is absorbed to change a refractive index of light. CONSTITUTION: A light emitting device(151) irradiates light to detect a predetermined thickness of a layer. The refraction mirror reflects the light irradiated from the light emitting device to a polishing pad(120). The window(155) is formed in a portion of the polishing pad corresponding to the refractive mirror(153) to transmit the light to the outside of the polishing pad. A slurry introducing path is formed on the upper surface facing a wafer carrier. A detecting unit detects the light reflected from a wafer(10) and an etch end point. A deionized water absorbing pipe absorbs drops of the deionized water at a vacuum pressure, penetrating a polishing table(110). One end of the deionized water absorbing pipe is installed on the back surface of the window facing the refractive mirror. A vacuum pump generates vacuum pressure in the deionized water absorbing pipe, connected to the other end of the deionized water absorbing pipe.
申请公布号 KR20020045739(A) 申请公布日期 2002.06.20
申请号 KR20000075127 申请日期 2000.12.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KO, GEUN YEONG
分类号 H01L21/302;(IPC1-7):H01L21/302 主分类号 H01L21/302
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