发明名称 Compensation semiconductor component and method of fabricating the semiconductor component
摘要 The semiconductor component is a charge carrier compensation component formed in a semiconductor body. A semiconductor basic body is disposed in the semiconductor body. The basic body has at least one compensation layer which adjoins a boundary layer and first regions of a first conductivity type and second regions of a second conductivity type are provided along a layout grid. A total quantity of charge of the first regions corresponds approximately to a total quantity of charge of the second regions. At least one semiconductor layer in the semiconductor body adjoins the semiconductor basic body at the boundary layer. A multiplicity of doped regions are embedded in the first surface of the semiconductor layer which form a grid for a cell array of the semiconductor component. The grid in the semiconductor layer is aligned independently of the layout grid in the semiconductor basic body.
申请公布号 US2002074567(A1) 申请公布日期 2002.06.20
申请号 US20010974650 申请日期 2001.10.09
申请人 DEBOY GERALD;STRACK HELMUT 发明人 DEBOY GERALD;STRACK HELMUT
分类号 H01L21/336;H01L29/06;H01L29/78;(IPC1-7):H01L31/033 主分类号 H01L21/336
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