Thin film transistor including polycrystalline active layer and method for fabricating the same

摘要

A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MILC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT. The TFT fabricated according to the present invention has improved electrical characteristics such as electron mobility and leakage current. The present invention further improves the performance of the TFT by making the MILC boundary is formed outside of the channel region so that the MILC boundary may not adversely affect the operation of the TFT.