| 摘要 |
PURPOSE: A method for fabricating an isolation layer is provided to decrease the number of steps for a photolithography process for removing a step caused by a difference of pattern density and for a chemical mechanical polishing(CMP) process for planarization, by forming an isolating oxide layer on a semiconductor substrate and by forming an epitaxial layer on the substrate in an active region. CONSTITUTION: A high density plasma(HDP) oxide layer(32) and a nitride layer are sequentially formed on the semiconductor substrate(31) where the active region and an isolation region are defined. A photoresist layer pattern is formed on the nitride layer in the isolation region. After the nitride layer and the HDP oxide layer in the active region are etched by using the photoresist layer pattern as a mask, a cleaning process is performed. The photoresist layer is removed and a liner oxide layer(35) is formed on the entire surface. The liner oxide layer on the semiconductor substrate and the HDP oxide layer are eliminated. An epitaxial layer(36) is formed on the semiconductor substrate in the active region. A thermal oxide layer is grown on the epitaxial layer. The thermal oxide layer and the nitride layer are eliminated.
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