SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer (10) having a first main surface (10a) and a second main surface (10b). A first recess (1) including a side portion (10c) and a bottom portion (10d) is formed in the first main surface (10a) of the first silicon carbide layer (10). A second silicon carbide layer (20) is formed in contact with the first main surface (10a), the side portion (10c), and the bottom portion (10d). An image of a second recess (2) formed at a position facing the first recess (1) of the fourth main surface (20a) is obtained. Alignment is performed based on the image of the second recess (2). The first main surface corresponds to a plane angled off relative to a {0001} plane. A ratio obtained by dividing a depth (D) of the first recess (1) by a thickness (T) of the second silicon carbide layer (20) is more than 0.2. In this way, there can be provided a method for manufacturing a silicon carbide semiconductor device to allow for improved alignment precision.