发明名称 |
Complementary transistors having respective gates formed from a metal and a corresponding metal-silicide |
摘要 |
A method of forming a first and second transistor. The method provides a semiconductor surface (20). The method also forms a gate dielectric (30) adjacent the semiconductor surface. Further, the method forms a first transistor gate electrode (902) comprising a metal portion (402) in a fixed relationship with respect to the gate dielectric. Still further, the method forms a second transistor gate electrode (901) comprising a silicide (701) of the metal portion in a fixed relationship with respect to the gate dielectric.
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申请公布号 |
US2002076886(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010998068 |
申请日期 |
2001.11.30 |
申请人 |
ROTONDARO ANTONIO L.P.;VISOKAY MARK R. |
发明人 |
ROTONDARO ANTONIO L.P.;VISOKAY MARK R. |
分类号 |
H01L21/28;H01L21/8238;H01L27/092;H01L29/423;H01L29/43;H01L29/49;(IPC1-7):H01L21/823;H01L21/823;H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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