发明名称 |
COMPOUND SEMICONDUCTOR MULTILAYER STRUCTURE AND BIPOLAR TRANSISTOR USING THE SAME |
摘要 |
A compound semiconductor multilayer structure comprising a carbon-containing p-type gallium arsenide (GaAs)-system crystal layer, wherein the carbon-containing p-type GaAs-system crystal layer exhibits a predominant photoluminescence peak measured at 20K within a range of 828 nm to 845 nm, and wherein the ratio of hydrogen atom concentration to carbon atom concentration in the carbon-containing p-type GaAs crystal layer is 1/5 or less. Furthermore, in a photoluminescence measurement at 10K, the carbon-containing GaAs-system p-type crystal layer exhibits a first predominant photoluminescence peak and a second predominant photoluminescence peak due to band gap transitions of GaAs and wherein the second predominant luminescence wavelength has a longer wavelength than the first predominant photoluminescence wavelength and the intensity ratio of the second luminescence peak to the first luminescence peak is within a range from 0.5 to 3. |
申请公布号 |
WO0221599(A3) |
申请公布日期 |
2002.06.20 |
申请号 |
WO2001JP07536 |
申请日期 |
2001.08.31 |
申请人 |
SHOWA DENKO K.K.;OKANO, TAICHI;UDAGAWA, TAKASHI |
发明人 |
OKANO, TAICHI;UDAGAWA, TAKASHI |
分类号 |
C30B25/02;H01L29/15;H01L29/207;H01L29/737 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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