| 摘要 |
<p>A trench Schottky barrier rectifier and a method of making the same are disclosed. The rectifier comprises: (a) A semiconductor region having first and second opposing faces. The semiconductor region comprises a drift region of first conductivity type adjacent the first face and a cathode region of the first conductivity type adjacent the second face. The drift region and a lower net doping concentration than that of the cathode region. (b) A plurality of trenches extending into the semiconductor region from the first face. The trenches define a plurality of mesas within the semiconductor region, and the trenches form a plurality of trench intersections. (c) An oxide layer covering the semiconductor region on bottoms of the trenches and on lower portions of sidewalls of the trenches. (d) A polysilicon region disposed over the oxide layer within the trenches. (e) Insulating regions at the trench intersections that cover a portion of the polysilicon region and a portion of the oxide layer.</p> |
