发明名称 Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation
摘要 The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
申请公布号 US2002074238(A1) 申请公布日期 2002.06.20
申请号 US20010967075 申请日期 2001.09.28
申请人 MAYER STEVEN T.;CONTOLINI ROBERT J.;BROADBENT ELIOT K.;DREWERY JOHN S. 发明人 MAYER STEVEN T.;CONTOLINI ROBERT J.;BROADBENT ELIOT K.;DREWERY JOHN S.
分类号 B23H5/08;H01L21/321;H01L21/3213;(IPC1-7):C25F3/00;C25F7/00 主分类号 B23H5/08
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