Electrostatic discharge protection circuit

摘要

An electrostatic discharge (ESD) protection device includes a semiconductor layer, a source region formed in the layer, a drain region formed in the layer, a channel region in the layer between the source and drain regions, and a gate over the channel region. A plurality of current divider segments are distributed on the drain region and extend between the gate and drain contacts. The segments can be formed of polysilicon or a field oxide.