发明名称 Antifuse memory cell and antifuse memory cell array
摘要 An antifuse memory cell comprises a first antifuse having a first electrode and a second electrode, a second antifuse having a first electrode and a second electrode, and an MOS transistor having a gate,a source and a drain, wherein the first electrode of the first antifuse is connected to the first electrode of the second antifuse, and the drain of the MOS transistor is connected to said first electrode of the first antifuse and the first electrode of the second antifuse.
申请公布号 US2002075744(A1) 申请公布日期 2002.06.20
申请号 US20000742550 申请日期 2000.12.20
申请人 MCCOLLUM JOHN 发明人 MCCOLLUM JOHN
分类号 G11C17/16;(IPC1-7):G11C5/00 主分类号 G11C17/16
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