摘要 |
An antifuse memory cell comprises a first antifuse having a first electrode and a second electrode, a second antifuse having a first electrode and a second electrode, and an MOS transistor having a gate,a source and a drain, wherein the first electrode of the first antifuse is connected to the first electrode of the second antifuse, and the drain of the MOS transistor is connected to said first electrode of the first antifuse and the first electrode of the second antifuse.
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