METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING STRUCTURE OF COPPER WIRE BY FILLING METAL OXIDE INTO GRAIN BOUNDARY OF DIFFUSION BARRIER

摘要

PURPOSE: A method for fabricating a semiconductor device having a structure of a copper wire by filling a metal oxide into a grain boundary of a diffusion barrier is provided to form the semiconductor device having the copper wire for commercial use by using a structure for filling the grain boundary. CONSTITUTION: A dielectric film(20) is formed on each upper portion of substrates(10,20). A via pattern is formed on the dielectric film(20). A TiN thin film(32) as a diffusion barrier is formed on the dielectric film(20) including the via pattern. Oxygen is filled into a grain boundary of the TiN thin film(32). An aluminium thin film(34) as an intermediate metal layer(32) is deposited by using a CVD(Chemical Vapor Deposition) method. A copper layer is deposited thereon by using a PVD(Physical Vapor Deposition) method or an electroplating method or an MOCVD(Metal Organic Chemical Vapor Deposition) method. A copper wire pattern(50) is formed by performing a planarization process.