发明名称 |
Memory module having data switcher in high speed memory device |
摘要 |
In a memory module having a plurality of memory chips and a plurality of data switchers on one board, wherein each data switcher is selectively turned on or off in response to a switcher control signal to connect corresponding memory chip with a common data bus line, an apparatus for generating the switcher control signal includes: a plurality of shift counting units for shift counting a write command signal in response to an internal clock signal and a reset signal, to generate a plurality of shift counting signals; a switcher enable control signal generator for receiving the shift counting signals to generate a switcher enable control signal for enabling the switcher control signal during a predetermined time corresponding to a burst length; a pull down driver for pulling down the switcher control enable signal to generate a pull-down signal; and an output unit for outputting the switcher control signal in response to the pull-down signal.
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申请公布号 |
US6407962(B1) |
申请公布日期 |
2002.06.18 |
申请号 |
US20000617535 |
申请日期 |
2000.07.14 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KA SOON-TAEG |
分类号 |
G11C7/10;(IPC1-7):G11C8/00 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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