| 摘要 |
PURPOSE: A method for fabricating a self-aligned pattern using a half-develop process is provided to simplify a fabricating process, by eliminating an exposure process for patterning a predetermined layer so that a process for forming an exposure mask, a mask inspection process and a mask cleaning process are omitted. CONSTITUTION: A substrate(31) having a predetermined step is prepared. An insulation layer having a trench(34b) is formed in a portion of the substrate having no step. A thin film to pattern is formed on the substrate including the trench. A planarization layer is formed on the thin film. The planarization layer is half-developed and left only in the trench. The thin film is patterned by using the remaining planarization layer as a mask.
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