| 摘要 |
PROBLEM TO BE SOLVED: To improve the electric nature of a semiconductor by solving the question that a screen oxide layer becomes excessively nonuniform with respect to its thickness. SOLUTION: There are provided a substrate with gates 34, 36 disposed on specified surface regions, a screen oxide layer 44 disposed on a substrate surface so as to surround the gates 34, 36, and an insulation layer covering the gates and the screen oxide layer. The insulation layer on the gate surface and the substrate surface is removed by anisotropically dry etching to form gate spacers 43 on the insulation layer remaining on the gates side walls, and the screen oxide layer 44 not covered with the spacers is wet etched down to a specified thickness using diluted hydrofluoric acid(DHF).
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