发明名称 |
Channel hot electron programmed memory device having improved reliability and operability |
摘要 |
A CHE programmed memory device (30) avoids forward biasing at an isolated P-well (38) junction with a deep N-well (36) and prevents emitting electrons that may cause voltage buildup across the isolated P-well region (38) by applying a forward bias current (50) or voltage source (40) connected to the deep N-well region (36) for slightly forward biasing the deep N-well region. This maintains the voltage drop of isolated P-well region (38) below the diode turn-on voltage.
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申请公布号 |
US6187635(B1) |
申请公布日期 |
2001.02.13 |
申请号 |
US19990311752 |
申请日期 |
1999.05.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KAYA CETIN |
分类号 |
G11C16/04;G11C16/10;G11C16/12;H01L27/115;H01L29/788;(IPC1-7):H01L21/824 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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