| 摘要 |
PURPOSE: A method of forming a pattern by using a resist material which contains a polymer compound as base resin, is sensitive to high-energy radiation and has excellent sensitivity, resolution and etching resistance is provided. The resist material can form a pattern perpendicular to a substrate because it is low in absorption at wavelengths of an ArF excimer laser, KrF excimer laser. CONSTITUTION: A pattern is formed by the following process consisting of: coating a resist material on a substrate; exposing with high energy rays through a photomask after heat treatment; and if necessary, developing with a developing agent after heat treatment. The polymer having a molecular weight of 1,000 to 500,000 has a recurring unit of formula (1-1) or (1-2). In formula, R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k is 0 or 1.
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