SOI SUBSTRATE, MANUFACTURING METHOD THEREOF, ELEMENT SUBSTRATE, MANUFACTURING METHOD THEREOF, ELECTROOPTICAL DEVICE, ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide an SOI substrate and its manufacturing method which perfectly prevents impurities contained in a support substrate or adsorbed to a cladding surface of the substrate support with a single crystal silicon substrate from diffusing to a single crystal silicon layer. SOLUTION: The SOI substrate 200 is manufactured by steps of thermally oxidating a single crystal silicon substrate 202A surface to form a first silicon oxide film 203B, nitriding or oxynitriding the single crystal silicon substrate 202A surface to form a silicon nitride film or a silicon oxynitride film 204, thermally oxidating the single crystal silicon substrate 202A surface to form a second silicon oxide film 203A, cladding the support substrate 201 with the single crystal silicon substrate 202A through a cladding surface using the first silicon oxide film 203B surface, and finally thinning the single crystal silicon substrate 202A clad to the support substrate 201 to form a single crystal silicon layer 202.