| 摘要 |
PROBLEM TO BE SOLVED: To offer a programmable neuron MOSFET on SOI which can attain a rapid learning or long-term learning without a harmful influence upon an active region of other devices. SOLUTION: A programmable neuron MOSFET structure is formed on an SOI substrate. A number of capacitor structures 241, 231 are formed on an SOI substrate. Substrate regions 330 and 340 are divided from each other completely by a dividing structure 270. Additionally, a transistor structure 210 of the neuron MOSFET is divided completely from the capacitor structures 241, 231 by the diving structure 270. This neuron MOSFET also comprises conductive layers 200, 230 and 240 arranged adjacently to gate structures 230, 240 of the capacitors and a floating gate 200 of the transistor structure and forms them.
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