| 摘要 |
A nonvolatile semiconductor memory device is described, which comprises a memory cell array, a block address input circuit, and a block selection circuit. The memory cell array includes a plurality of normal blocks for storing normal data, and a plurality of boot blocks for storing boot codes initializing a system. Further, the nonvolatile semiconductor memory device has a plurality of boot block architecture options. The boot block input circuit receives an external block address, and coverts the external block address into an internal block address in accordance with selected one of a plurality of the boot block architecture options. Further, the block address input circuit includes an option selection means having a pair of terminals. The block selection circuit selects one of the blocks of the memory cell array in response to the internal block address. The selection of one of the boot block architecture options is determined by electric connection/disconnection of the terminals of the option selection means.
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