| 摘要 |
Disclosed is a method of judging whether dielectric breakdown of an insulating film used in a semiconductor device occurs due to the application of a current to the insulating film. A voltage Vi is measured by applying a current Ii to the insulating film for an arbitrary time period. Next, a voltage Vi+1 is measured by applying a current Ii+1 (|Ii+1| |Ii|) to the insulating film for an arbitrary time period. Then, the voltage Vi is compared with the voltage Vi+1 to find a difference between these voltages. One of the following judgment conditions is used (where Vcheck is set at an arbitrary value) and it is judged that there occurs dielectric breakdown of the insulating film if the judgment condition is satisfied by the found difference.
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