| 发明名称 |
METHOD FOR PRODUCING A POSITIVELY DOPED SEMICONDUCTOR WITH LARGE FORBIDDEN BAND |
| 摘要 |
<p>The invention concerns a method for producing a positively doped semiconductor with large forbidden band, which consists in growing the semiconductor in the presence of an element capable of acting as surfactant at the growth surface and of inhibiting the formation of gaps; doping the semiconductor with an appropriate positive doping agent. Preferably, ZnO is used as semiconductor. The invention is useful for producing positively doped ZnO.</p> |
| 申请公布号 |
WO0247147(A1) |
申请公布日期 |
2002.06.13 |
| 申请号 |
WO2001FR03843 |
申请日期 |
2001.12.05 |
| 申请人 |
HOSSEINI TEHERANI, FERECHTEH |
发明人 |
HOSSEINI TEHERANI, FERECHTEH |
| 分类号 |
C30B29/16;C30B23/00;C30B25/00;C30B28/12;C30B28/14;H01L21/203;H01L21/363;H01L21/365;H01L31/0296;H01L31/18;H01L33/00;(IPC1-7):H01L21/363 |
主分类号 |
C30B29/16 |
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