Semiconductor laser device

摘要

A semiconductor laser having high speed modulation function over a wide temperature range can be attained by making an active layer region of a semiconductor laser as a multiple quantum well structure of InGaAlAs or InGaAs material system, and defining the bandgap wavelength of the barrier layer to less than 950 nm, or alternatively, by making the bandgap wavelength of a barrier to less than 1000 nm and the bandgap wavelength optical guide layer substantially equal with or shorter than that of the barrier layer in a structure having a multiple quantum well of the same material system having an active layer and an optical guide layer in adjacent therewith.