发明名称 |
SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR THIN FILM CONTAINING LOW CONCENTRATION OF UNBOUND HYDROGEN ATOMS AND METHOD OF MANUFACTURING THE SAME |
摘要 |
In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5x1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
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申请公布号 |
US2002072157(A1) |
申请公布日期 |
2002.06.13 |
申请号 |
US19980049353 |
申请日期 |
1998.03.27 |
申请人 |
JINNO YUSHI;NAKANISHI SHIRO;HIRAI KYOKO;YAMADA TSUTOMU;MORIMOTO YOSHIHIRO;YONEDA KIYOSHI |
发明人 |
JINNO YUSHI;NAKANISHI SHIRO;HIRAI KYOKO;YAMADA TSUTOMU;MORIMOTO YOSHIHIRO;YONEDA KIYOSHI |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/136 |
代理机构 |
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