SEMICONDUCTOR THIN FILM FORMING METHOD, PRODUCTION METHODS FOR SEMICONDUCTOR DEVICE AND ELECTROOPTICAL DEVICE, DEVICES USED FOR THESE METHODS, AND SEMICONDUCTOR DEVICE AND ELECTROOPTICAL DEVICE

摘要

A method of forming a large-area, high-crystallinity, high quality, polycrystalline or single-crystal semiconductor thin film such as polycrystalline silicon, and a device for implementing this method. A method of forming a polycrystalline (or single-crystal) semiconductor thin film, or a method of fabricating a semiconductor device wherein, when forming on a substrate (1) a high-crystallinity, large-grain-size polycrystalline (or single-crystal) semiconductor thin film (7) such as a polycrystalline silicon film, or when fabricating a semiconductor device having a polycrystalline (or single-crystal) semiconductor thin film (7) on a substrate (1), after a low crystalline semiconductor thin film (7A) is formed on the substrate (1), a flash lamp anneal is applied to the thin film (7A), and the crystallization of the thin film (7A) is promoted by fusing, or semi-fusing, or heating and cooling in a non-fused condition to obtain the polycrystalline (or single-crystal) semiconductor thin film; and devices for implementing these methods.