| 摘要 |
A method of producing silicon carbide (SiC) high-temperature sensor elements by mixing a quantity of finely-divided particles of carbon in a binder; shaping, the mixture; applying finely-divided particles of elemental silicon over the shaped mixture; and heating the shaped mixture in a furnace, while subjected to a vacuum, to vaporize and diffuse the silicon and to react the silicon vapor with the carbon in the binder to convert the carbon to silicon carbide. The silicon particles are substantially free of dopants to produce a silicon carbide high-temperature sensor element having a high internal resistance of at least hundreds of Kilohm-cms.
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