New methods of fabricating devices and semiconductor layers comprising cadmium mercury telluride,mercury telluride,and cadmium telluride

摘要

The invention relates to a method of depositing Hg1-xCdxTe onto a substrate, in a MOVPE technique, where 0 & x & 1; comprising the step of reacting together a volatile organotellurium compound, and one or both of (i) a volatile organocadmium compound and (ii) mercury vapour; characterised in that the organotellurium compound is isopropylallyltelluride. The invention also relates to devices, such as infrared sensors and solar cells, that comprise Hg1-xCdxTe materials.