METHOD FOR FABRICATING CONDUCTIVE INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a conductive interconnection of a semiconductor device is provided to reduce contact resistance and sheet resistance of the conductive interconnection by interposing a polycrystalline silicon layer between a tungsten silicide layer and an insulation layer while a conductive interconnection contact is formed of the tungsten silicide layer only. CONSTITUTION: An interlayer dielectric(7) is formed on a semiconductor substrate(1) of a predetermined structure. The polycrystalline silicon layer is formed on the interlayer dielectric. The polycrystalline silicon layer and the interlayer dielectric on a portion of the interlayer dielectric reserved for the conductive interconnection contact are sequentially eliminated to form a contact hole(8). The tungsten silicide layer in contact with a lower conductive layer through the contact hole is formed on the polycrystalline silicon layer. The tungsten silicide layer and the polycrystalline silicon layer are sequentially patterned by using a conductive interconnection mask to form the conductive interconnection(9) composed of a tungsten silicide layer pattern(9B) and a polycrystalline silicon layer pattern(9A) that overlap each other.