发明名称 |
Tungsten layer formation method for semiconductor device and semiconductor device using the same |
摘要 |
A tungsten layer formation method for a semiconductor device reduces resistivity of the tungsten layer without requiring modification of the conventional manufacturing system. The method includes treating the surface of a barrier metal layer formed over a semiconductor substrate in a pressure environment of over 40 Torr using SiH4 gas; forming a tungsten seed layer on the treated barrier metal layer using WF6 and SiH4 gases, a mixing ratio {WF6}/{SiH4} of the gases being less than or equal to one; and forming a tungsten layer on the treated barrier metal layer using WF6 gas, the treated barrier metal layer having the tungsten seed layer formed thereon.
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申请公布号 |
US6404054(B1) |
申请公布日期 |
2002.06.11 |
申请号 |
US20000609927 |
申请日期 |
2000.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH SEONG-TAE;KIM KYUNG-TAE;BAEK HONG-JOO;KIM HUN-KI |
分类号 |
H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L29/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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